RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Avant Technology W6451U66J9266ND 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Avant Technology W6451U66J9266ND 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Avant Technology W6451U66J9266ND 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
72
Around 60% lower latency
Faster write speed, GB/s
9.0
8.2
Average value in the tests
Reasons to consider
Avant Technology W6451U66J9266ND 4GB
Report a bug
Faster reading speed, GB/s
16.6
13.4
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Avant Technology W6451U66J9266ND 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
72
Read speed, GB/s
13.4
16.6
Write speed, GB/s
9.0
8.2
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2423
1731
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Avant Technology W6451U66J9266ND 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQKD1A08 1GB
Kllisre 8GB
Samsung 1600 CL10 Series 8GB
Kingston KHX3733C19D4/16GX 16GB
Samsung M471B5173DB0-YK0 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Avant Technology W6451U66J9266ND 4GB
Kingston 9905403-011.A03LF 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Lenovo 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
takeMS International AG TMS2GB264D083805EV 2GB
Avant Technology W641GU42J5213N3 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Apacer Technology 78.CAGR4.40C0B 8GB
G Skill Intl F5-5600J4040C16G 16GB
Corsair CMK64GX4M4A2133C13 16GB
Kingston KVR16N11/8-SP 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston HP669238-071-HYC 4GB
Hewlett-Packard 48U45AA# 16GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Netac Technology Co Ltd E40832A 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Kllisre 0000 8GB
Report a bug
×
Bug description
Source link