RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Crucial Technology CT16G4DFD8213.C16FDD 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
34
Around 15% lower latency
Reasons to consider
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Report a bug
Faster reading speed, GB/s
14.7
13.4
Average value in the tests
Faster write speed, GB/s
9.2
9.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
34
Read speed, GB/s
13.4
14.7
Write speed, GB/s
9.0
9.2
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2423
2597
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB RAM comparisons
Kingston 9965525-140.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-4400C19-8GTZSW 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Crucial Technology CT102464BF160B-16F 8GB
Kingston KF3200C16D4/32GX 32GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3000C14-8GTZR 8GB
Kingston KVR16N11/8-SP 8GB
Kingston HP32D4U8S8HC-8X 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Transcend Information TS2GLH64V6B 16GB
Samsung M391B5673EH1-CH9 2GB
Apacer Technology D12.2344DT.001 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
G Skill Intl F5-6400J3239G16G 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
AMD AE34G1601U1 4GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston HP37D4U1S8ME-16X 16GB
Swissbit MEU25664D6BC2EP-30 2GB
Samsung M393A4K40BB1-CRC 32GB
Hexon Technology Pte Ltd HEXON 1GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMK32GX4M1A2666C16 32GB
Report a bug
×
Bug description
Source link