RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Faster reading speed, GB/s
13.4
12.7
Average value in the tests
Faster write speed, GB/s
9.0
6.3
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
29
Around -21% lower latency
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
24
Read speed, GB/s
13.4
12.7
Write speed, GB/s
9.0
6.3
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2423
2256
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB RAM comparisons
Samsung M323R2GA3BB0-CQKOD 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905678-007.A00G 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9905702-119.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3400C16-8GTZKW 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-2666C19-32GNT 32GB
Essencore Limited KD48GU88C-26N1600 8GB
Hewlett-Packard 7EH61AA# 8GB
AMD AE34G2139U2 4GB
G Skill Intl F4-3200C16-8GVR 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2800C16-8GVG 8GB
Apacer Technology 78.01GA0.9K5 1GB
Kingston KF3200C20S4/32GX 32MB
Samsung M378B5773DH0-CH9 2GB
Corsair CMK8GX4M1D3000C16 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C15-8GNS 8GB
Kingston 9965516-430.A00G 16GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Report a bug
×
Bug description
Source link