RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Micron Technology 16ATF4G64HZ-3G2E2 32GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
43
Around 33% lower latency
Reasons to consider
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Report a bug
Faster reading speed, GB/s
15.5
13.4
Average value in the tests
Faster write speed, GB/s
11.9
9.0
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
43
Read speed, GB/s
13.4
15.5
Write speed, GB/s
9.0
11.9
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2423
2864
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB RAM comparisons
Kingston 9905403-156.A00LF 2GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Kingston KF560C40-16 16GB
Samsung M378A1K43BB2-CTD 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston SMD4-S8G48HJ-26V 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M393A1G40EB1-CRC 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
SK Hynix HMA84GR7AFR4N-UH 32GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4SFD824A.M16FR 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3200C16-8GVKB 8GB
Report a bug
×
Bug description
Source link