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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung M393A1G43DB0-CPB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Samsung M393A1G43DB0-CPB 8GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Overall score
star star star star star
Samsung M393A1G43DB0-CPB 8GB

Samsung M393A1G43DB0-CPB 8GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 50
    Around 42% lower latency
  • Faster reading speed, GB/s
    13.4 left arrow 10.6
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 8.8
    Average value in the tests
Samsung M393A1G43DB0-CPB 8GB Reasons to consider
Samsung M393A1G43DB0-CPB 8GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung M393A1G43DB0-CPB 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    29 left arrow 50
  • Read speed, GB/s
    13.4 left arrow 10.6
  • Write speed, GB/s
    9.0 left arrow 8.8
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2423 left arrow 2393

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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