RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Crucial Technology CT16G4SFD8266.M16FE 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Crucial Technology CT16G4SFD8266.M16FE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
15.2
Average value in the tests
Reasons to consider
Crucial Technology CT16G4SFD8266.M16FE 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
65
Around -76% lower latency
Faster write speed, GB/s
12.4
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
37
Read speed, GB/s
3,580.8
15.2
Write speed, GB/s
1,592.0
12.4
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
572
2863
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Crucial Technology CT16G4SFD8266.M16FE 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5273CH0-CH9 4GB
Kingston 9965589-035.D00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-4GTZB 4GB
Kingston 9905584-016.A00LF 4GB
Corsair CMK16GX4M1E3200C16 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3600C16-8GTZKW 8GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology GD2.11173T.001 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT16G4DFD8266.M16FE 16GB
Kingston KVR533D2N4 512MB
Corsair CMK32GX4M4Z2933C16 8GB
Samsung M471B5173QH0-YK0 4GB
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology CT16G4SFD824A.C16FBD 16GB
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-2400C15-4GRB 4GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMW64GX4M4D3600C18 16GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3000C16-8GSXWB 8GB
Report a bug
×
Bug description
Source link