RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-4000C16-16GTZRA 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
G Skill Intl F4-4000C16-16GTZRA 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
20.9
Average value in the tests
Reasons to consider
G Skill Intl F4-4000C16-16GTZRA 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
65
Around -132% lower latency
Faster write speed, GB/s
17.4
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
28
Read speed, GB/s
3,580.8
20.9
Write speed, GB/s
1,592.0
17.4
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
3963
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-4000C16-16GTZRA 16GB RAM comparisons
Samsung M378A1K43DB2-CTD 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-4000C16-16GTZRA 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
G Skill Intl F3-2666C12-8GTXD 8GB
Avexir Technologies Corporation T-20181206 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Samsung M393B1K70CH0-CH9 8GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
Corsair CMV4GX3M1B1600C11 4GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
Kingston 16KTF1G64HZ-1G6E1 8GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
DSL Memory D4SS12081SH21A-A 4GB
Kingston 99U5595-005.A00LF 2GB
Corsair CMK16GX4M1Z3600C18 16GB
Kingston 9905469-153.A00LF 4GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905711-007.A00G 4GB
Kingston KHX2400C11D3/4GX 4GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F4-3200C16-8GFX 8GB
Report a bug
×
Bug description
Source link