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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
INTENSO 5641160 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs INTENSO 5641160 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
INTENSO 5641160 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
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Faster reading speed, GB/s
3
16.1
Average value in the tests
Reasons to consider
INTENSO 5641160 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
65
Around -183% lower latency
Faster write speed, GB/s
10.2
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
INTENSO 5641160 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
23
Read speed, GB/s
3,580.8
16.1
Write speed, GB/s
1,592.0
10.2
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
2613
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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