RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Micron Technology 16ATF2G64AZ-2G6B1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
18.2
Average value in the tests
Reasons to consider
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
65
Around -195% lower latency
Faster write speed, GB/s
13.5
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
22
Read speed, GB/s
3,580.8
18.2
Write speed, GB/s
1,592.0
13.5
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
572
3201
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated PSD34G13332 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Corsair CMD32GX4M4B2133C10 8GB
Samsung M393B2G70BH0-CH9 16GB
Kingston KF3200C20S4/16GX 16GB
Kingston 99U5428-018.A00LF 8GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9905625-076.A00G 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Asgard VMA42UG-MEC1U2AW1 8GB
Kingston 9905471-002.A00LF 2GB
Corsair CMK32GX4M2C3200C18 16GB
Avant Technology F641GU67F9333G 8GB
Golden Empire CL19-19-19 D4-2666 4GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology D12.2326WH.001 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M393A2K40BB1-CRC 16GB
Kingston 9965525-140.A00LF 8GB
Kingston KHX2666C16D4/32GX 32GB
Kingston HP16D3LS1KBGH/4G 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Kingston 39P5429-006.AO01 2GB
G Skill Intl F4-3200C14-8GTZN 8GB
Report a bug
×
Bug description
Source link