RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Panram International Corporation W4N2400PS-8G 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Panram International Corporation W4N2400PS-8G 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Panram International Corporation W4N2400PS-8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
16.6
Average value in the tests
Reasons to consider
Panram International Corporation W4N2400PS-8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
65
Around -183% lower latency
Faster write speed, GB/s
12.9
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Panram International Corporation W4N2400PS-8G 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
23
Read speed, GB/s
3,580.8
16.6
Write speed, GB/s
1,592.0
12.9
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
572
2825
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Panram International Corporation W4N2400PS-8G 8GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5170FH0-CK0 4GB
Samsung M378A1K43BB2-CTD 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9965596-031.B00G 8GB
Samsung M393B1G70QH0-YK0 8GB
Golden Empire CL16-18-18 D4-2666 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Kingston 9965604-001.D00G 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
Samsung M391B5273CH0-CH9 4GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Swissbit MEU25664D6BC2EP-30 2GB
Gloway International (HK) STK4U2400D17042C 4GB
SK Hynix DDR2 800 2G 2GB
Kingston 9905701-003.A00G 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2400C16-16GFXR 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Gloway International (HK) STK4U2400D17082C 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Samsung M378A5244CB0-CWE 4GB
Kingston 9965525-018.A00LF 4GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Report a bug
×
Bug description
Source link