RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Below the latency in the PassMark tests, ns
65
71
Around 8% lower latency
Faster reading speed, GB/s
3
15.6
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster write speed, GB/s
6.4
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
71
Read speed, GB/s
3,580.8
15.6
Write speed, GB/s
1,592.0
6.4
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
572
1650
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CMY16GX3M4A2133C8 4GB
Kingston 9905625-062.A00G 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9905622-024.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Kingston 9965516-112.A00LF 16GB
Kingston KHX3466C16D4/8GX 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M378A1G43DB0-CPB 8GB
Kingston K531R8-MIN 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3600C17-16GTZKK 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
InnoDisk Corporation 16GB
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905598-025.A00G 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Kingston KVR800D2N6/2G 2GB
Kingston KHX3333C16D4/16GX 16GB
Kingston ACR256X64D3S1333C9 2GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Samsung M474A4G43MB1-CTD 32GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CMT64GX4M8X3600C18 8GB
Report a bug
×
Bug description
Source link