Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs A-DATA Technology AO1P24HC4R1-BSIS 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score
star star star star star
A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

Differences

  • Below the latency in the PassMark tests, ns
    24 left arrow 36
    Around 33% lower latency
  • Faster reading speed, GB/s
    16 left arrow 14.9
    Average value in the tests
  • Faster write speed, GB/s
    12.5 left arrow 8.2
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    24 left arrow 36
  • Read speed, GB/s
    16.0 left arrow 14.9
  • Write speed, GB/s
    12.5 left arrow 8.2
  • Memory bandwidth, mbps
    19200 left arrow 19200
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2925 left arrow 2281
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons