RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DDR4 3200 2OZ 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs A-DATA Technology DDR4 3200 2OZ 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
A-DATA Technology DDR4 3200 2OZ 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
29
Around 17% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
A-DATA Technology DDR4 3200 2OZ 4GB
Report a bug
Faster reading speed, GB/s
17.2
16
Average value in the tests
Faster write speed, GB/s
13.8
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DDR4 3200 2OZ 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
29
Read speed, GB/s
16.0
17.2
Write speed, GB/s
12.5
13.8
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3409
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
A-DATA Technology DDR4 3200 2OZ 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3333C16-8GTZKW 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
Kingston ACR16D3LS1KNG/4G 4GB
G Skill Intl F4-3600C14-8GTZRA 8GB
Kingston 9905403-134.A00LF 2GB
Samsung M393A5143DB0-CRC 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9905664-010.A00G 4GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3600C16-16GTZNC 16GB
Hexon Technology Pte Ltd HEXON 1GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
Kingston 99U5403-465.A00LF 8GB
Samsung M378A2G43MX3-CTD 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMR64GX4M8C3000C15 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Corsair CMU32GX4M2A2400C14 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston CAC24D4S7D8MB-16 16GB
Kingston 9905458-017.A01LF 4GB
Corsair CMK8GX4M2B3200C16 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Report a bug
×
Bug description
Source link