RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avant Technology J641GU48J5213NG 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Avant Technology J641GU48J5213NG 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Avant Technology J641GU48J5213NG 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Faster reading speed, GB/s
16
14
Average value in the tests
Faster write speed, GB/s
12.5
10.3
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Avant Technology J641GU48J5213NG 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avant Technology J641GU48J5213NG 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
14.0
Write speed, GB/s
12.5
10.3
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2310
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Avant Technology J641GU48J5213NG 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT102464BF160B-16F 8GB
SK Hynix HMA41GR7MFR4N-TF 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3200C16-8GSX 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston X75V1H-MIE 32GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Samsung M3 78T3354BZ0-CCC 256MB
AMD R744G2400U1S-UO 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
Samsung M378B5173QH0-CK0 4GB
Samsung M378B5273CH0-CK0 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Mushkin 99[2/7/4]199[F/T] 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905665-011.A00G 4GB
Samsung M3 78T5663RZ3-CF7 2GB
Kingston MSI26D4S9S8ME-8 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
Samsung M391B5673FH0-CH9 2GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Report a bug
×
Bug description
Source link