RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avant Technology W642GU42J9266N8 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Avant Technology W642GU42J9266N8 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Avant Technology W642GU42J9266N8 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Reasons to consider
Avant Technology W642GU42J9266N8 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
24
Around -4% lower latency
Faster reading speed, GB/s
17.5
16
Average value in the tests
Faster write speed, GB/s
14.5
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avant Technology W642GU42J9266N8 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
23
Read speed, GB/s
16.0
17.5
Write speed, GB/s
12.5
14.5
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3260
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Avant Technology W642GU42J9266N8 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5170FH0-CH9 4GB
Crucial Technology CT4G4DFS824A.C8FHP 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology W642GU42J9266N8 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston ACR32D4S2S8ME-16 16GB
Samsung M471B5273DH0-CH9 4GB
Kllisre M471A3243BB0-CP50 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Samsung M3 78T5663EH3-CF7 2GB
SK Hynix HMA41GU6MFR8N-TF 8GB
Kingston 9905471-006.A01LF 4GB
Corsair CMR128GX4M8Z2933C16 16GB
AMD AE34G2139U2 4GB
Samsung M378A5244CB0-CVF 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMK192GX4M12P3200C16 16GB
Kingston K531R8-MIN 4GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Samsung M393B4G70EMB-CK0 32GB
AMD R748G2400U2S 8GB
Crucial Technology CT51264BF160BJ.M8F 4GB
Kingston HP26D4S9S8MHF-8 8GB
Report a bug
×
Bug description
Source link