RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CM4X4GF2400C14K4 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CM4X4GF2400C14K4 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CM4X4GF2400C14K4 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Faster write speed, GB/s
12.5
11.9
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Corsair CM4X4GF2400C14K4 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
24
Around -4% lower latency
Faster reading speed, GB/s
16.3
16
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CM4X4GF2400C14K4 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
23
Read speed, GB/s
16.0
16.3
Write speed, GB/s
12.5
11.9
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2629
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CM4X4GF2400C14K4 4GB RAM comparisons
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X4GF2400C14K4 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston XJV223-MIE-NX 16GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C14-16GRK 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CM4X8GF2400C16N2 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KMKYF9-HYA 8GB
Samsung M378B5673EH1-CF8 2GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK8GX4M1A2666C16 8GB
Kingston 9905458-017.A01LF 4GB
Kingston 99U5403-185.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW16GX4M1Z3200C16 16GB
Kingston KP223C-ELD 2GB
G Skill Intl F4-2800C15-8GTXG 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3200C14-32GVK 32GB
Report a bug
×
Bug description
Source link