RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMD32GX4M4A2800C16 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMD32GX4M4A2800C16 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CMD32GX4M4A2800C16 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
36
Around 33% lower latency
Faster reading speed, GB/s
16
14.8
Average value in the tests
Faster write speed, GB/s
12.5
11.0
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Corsair CMD32GX4M4A2800C16 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMD32GX4M4A2800C16 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
36
Read speed, GB/s
16.0
14.8
Write speed, GB/s
12.5
11.0
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3073
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CMD32GX4M4A2800C16 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Super Talent F26UB16GH 16GB
Samsung M3 78T2863QZS-CF7 1GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair CMH32GX4M2E3200C16 16GB
Kingston KHX318C10FR/8G 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M393A5143DB0-CPB 4GB
Samsung M378B5673EH1-CF8 2GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Corsair CM3X8GA2400C11Y2R 8GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-3600C19-8GVRB 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Samsung M393B5170FH0-CH9 4GB
Essencore Limited KD4AGU880-32A160U 16GB
Kingston KHX1600C9D3/4G 4GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Report a bug
×
Bug description
Source link