RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW128GX4M8C3000C16 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMW128GX4M8C3000C16 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CMW128GX4M8C3000C16 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Faster reading speed, GB/s
16
14.7
Average value in the tests
Faster write speed, GB/s
12.5
11.4
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Corsair CMW128GX4M8C3000C16 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
24
Around -4% lower latency
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW128GX4M8C3000C16 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
23
Read speed, GB/s
16.0
14.7
Write speed, GB/s
12.5
11.4
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3007
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CMW128GX4M8C3000C16 16GB RAM comparisons
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M386B4G70DM0-CMA4 32GB
Kingston HP26D4S9S8MD-8 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Golden Empire CL16-18-18 D4-3400 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 9905630-051.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Kingston 99U5584-017.A00LF 4GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Kingston HX426C16FB2/8-SP 8GB
INTENSO M418039 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston 9905624-025.A00G 8GB
Samsung M378B5673EH1-CF8 2GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMT128GX4M4C3200C16 32GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Report a bug
×
Bug description
Source link