RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW16GX4M2C3000C15 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMW16GX4M2C3000C15 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CMW16GX4M2C3000C15 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
29
Around 17% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Corsair CMW16GX4M2C3000C15 8GB
Report a bug
Faster reading speed, GB/s
18.1
16
Average value in the tests
Faster write speed, GB/s
14.2
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW16GX4M2C3000C15 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
29
Read speed, GB/s
16.0
18.1
Write speed, GB/s
12.5
14.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3485
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CMW16GX4M2C3000C15 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW16GX4M2C3000C15 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3400C16-16GVK 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Samsung M393B5170FH0-CH9 4GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
Samsung M471B5773DH0-CH9 2GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Essencore Limited IM48GU48N21-FFFHM 8GB
Kingston 9905471-006.A01LF 4GB
Micron Technology M471A1K43BB1-CRC 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
Kingston 99U5429-007.A00LF 2GB
Corsair CMD16GX4M2B3466C16 8GB
Kingston 99U5471-030.A00LF 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMK16GX4M1A2666C16 16GB
Report a bug
×
Bug description
Source link