RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW32GX4M4D3600C18 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMW32GX4M4D3600C18 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CMW32GX4M4D3600C18 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Corsair CMW32GX4M4D3600C18 8GB
Report a bug
Faster reading speed, GB/s
18.3
16
Average value in the tests
Faster write speed, GB/s
15.8
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW32GX4M4D3600C18 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
18.3
Write speed, GB/s
12.5
15.8
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3736
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CMW32GX4M4D3600C18 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW16GX4M1Z3600C18 16GB
Team Group Inc. Vulcan-1600 4GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43CB1-CTD 8GB
Corsair CMD16GX3M2A1600C7 8GB
G Skill Intl F4-2400C15-8GVB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Swissbit MEU25664D6BC2EP-30 2GB
Kingston X0N6VG-HYD2 16GB
Kingston KTC1G-UDIMM 1GB
Kingston 99U5316-028.A00LF 1GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Kingston 9965657-011.A00G 16GB
Corsair CMY8GX3M2A2666C10 4GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Kingston 9905403-444.A00LF 4GB
Kingston 9905624-033.A00G 8GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
Report a bug
×
Bug description
Source link