RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BL8G36C16U4B.M8FE1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
27
Around 11% lower latency
Reasons to consider
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Report a bug
Faster reading speed, GB/s
20.1
16
Average value in the tests
Faster write speed, GB/s
16.7
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
27
Read speed, GB/s
16.0
20.1
Write speed, GB/s
12.5
16.7
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3759
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology CB16GU2666.C8ET 16GB
Samsung M378B5673FH0-CH9 2GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology BLS4G4D240FSC.8FBR2 4GB
Kingston KHX1600C9D3/4GX 4GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR24D4S7D8MB-16 16GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
Kingston 9905471-006.A01LF 4GB
G Skill Intl F4-3600C16-8GTZRC 8GB
Kingston 9965516-112.A00LF 16GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
Kingston 9905458-017.A01LF 4GB
Corsair CMK32GX4M4B3466C16 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston 9965604-001.D00G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Nanya Technology M471A5143EB1-CRC 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston XN205T-MIE2 16GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
Report a bug
×
Bug description
Source link