RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
67
Around 64% lower latency
Faster reading speed, GB/s
16
15.9
Average value in the tests
Faster write speed, GB/s
12.5
8.4
Average value in the tests
Reasons to consider
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
67
Read speed, GB/s
16.0
15.9
Write speed, GB/s
12.5
8.4
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
1895
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378T5663QZ3-CF7 2GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Samsung M471B5273EB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
Samsung M386B4G70DM0-CMA4 32GB
Kingston HP32D4U8D8HC-16XR 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3200C14-32GVK 32GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3866C18-4GTZ 4GB
Kingston MSI16D3LS1MNG/8G 8GB
Samsung M471A1K43CB1-CTD 8GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-2133C15-8GRR 8GB
Samsung M378B5273CH0-CH9 4GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-2400C17-4GNT 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
SK Hynix HMA41GU6MFR8N-TF 8GB
AMD AE34G2139U2 4GB
Corsair CMK16GX4M2B4266C19 8GB
Report a bug
×
Bug description
Source link