RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT8G4SFD8213.C16FADP 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
29
Around 17% lower latency
Faster reading speed, GB/s
16
13.1
Average value in the tests
Faster write speed, GB/s
12.5
9.6
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
29
Read speed, GB/s
16.0
13.1
Write speed, GB/s
12.5
9.6
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2243
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFD8213.C16FADP 8GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M392A4K40BM0-CRC 32GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-3200C16-16GVK 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD32GX4M2B3000C15 16GB
AMD R534G1601U1S-UO 4GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Kingston 99U5584-001.A00LF 4GB
Apacer Technology 78.BAGSR.4030B 4GB
Samsung M393B5170EH1-CH9 4GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Kingston KHX2133C11D3/4GX 4GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Kingston 9905598-026.A00G 16GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-4000C14-8GTZR 8GB
Kingston 99U5403-036.A00G 4GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
Kingston 99U5474-038.A00LF 4GB
G Skill Intl F4-2666C15-4GVK 4GB
Kingston 9965516-112.A00LF 16GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Report a bug
×
Bug description
Source link