RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT8G4SFS6266.M4FB 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT8G4SFS6266.M4FB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
36
Around 33% lower latency
Reasons to consider
Crucial Technology CT8G4SFS6266.M4FB 8GB
Report a bug
Faster reading speed, GB/s
17.1
16
Average value in the tests
Faster write speed, GB/s
12.6
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
36
Read speed, GB/s
16.0
17.1
Write speed, GB/s
12.5
12.6
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2920
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT8G4SFS6266.M4FB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT2K102464BD160B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFS6266.M4FB 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
AMD R538G1601U2S-UO 8GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
A-DATA Technology DDR4 2666 8GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
AMD AE34G1601U1 4GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BL8G26C16U4R.8FD 8GB
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5712-009.A00G 16GB
Kingston KHX318C10FR/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
Samsung M393B2G70BH0-CK0 16GB
Corsair CMSX64GX4M2A2666C18 32GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston KHX2133C14/8G 8GB
Kingston 9905471-006.A01LF 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CB4GU2400.M8E 4GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston 9905734-082.A00G 16GB
Report a bug
×
Bug description
Source link