RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs EXCELERAM D48G8G8H8SS9CJRB22 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
EXCELERAM D48G8G8H8SS9CJRB22 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
65
Around 63% lower latency
Faster write speed, GB/s
12.5
9.5
Average value in the tests
Reasons to consider
EXCELERAM D48G8G8H8SS9CJRB22 8GB
Report a bug
Faster reading speed, GB/s
17
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
65
Read speed, GB/s
16.0
17.0
Write speed, GB/s
12.5
9.5
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2058
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C16-8GTZKK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
EXCELERAM D48G8G8H8SS9CJRB22 8GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-2400C16-16GFXR 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-3600C19-16GTRG 16GB
PNY Electronics PNY 2GB
Apacer Technology 78.CAGPP.40C0B 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
SK Hynix HMA41GR7MFR8N-TF 8GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Samsung M471B5173EB0-YK0 4GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Asgard VMA41UG-MEC1U2AW1 8GB
Samsung M471B5173DB0-YK0 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Samsung M471B1G73QH0-YK0 8GB
SK Hynix HMA82GR7MFR8N-UH 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Report a bug
×
Bug description
Source link