RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C15-8GTZR 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3000C15-8GTZR 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3000C15-8GTZR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3000C15-8GTZR 8GB
Report a bug
Faster reading speed, GB/s
18.5
16
Average value in the tests
Faster write speed, GB/s
14.4
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C15-8GTZR 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
18.5
Write speed, GB/s
12.5
14.4
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3540
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3000C15-8GTZR 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT102464BA160B.M16 8GB
Corsair CMW16GX4M2C3200C14 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Corsair CMT32GX4M2E3200C16 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston ACR26D4U9D8MH-16 16GB
Samsung M393B1K70CH0-YH9 8GB
Kingston 9905701-143.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-8GTZR 8GB
Samsung M378B5173EB0-CK0 4GB
PUSKILL PJ8TFK1GM8 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-2133C15-8GFX 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology 8G2666CL19 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3200C16-16GTZKW 16GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMWX16GC3000C15W4 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3600C19-8GSXKB 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Kingston 9905403-156.A00LF 2GB
Gloway International (HK) STK4U2400D17082C 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C18-16GTZR 16GB
Report a bug
×
Bug description
Source link