RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3333C16-16GTZ 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3333C16-16GTZ 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3333C16-16GTZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
25
Around 4% lower latency
Faster reading speed, GB/s
16
15.8
Average value in the tests
Faster write speed, GB/s
12.5
11.8
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3333C16-16GTZ 16GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3333C16-16GTZ 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
25
Read speed, GB/s
16.0
15.8
Write speed, GB/s
12.5
11.8
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3081
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3333C16-16GTZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Kingston 99U5584-005.A00LF 4GB
SK Hynix HMA81GS6CJR8N-VK 8GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMK32GX4M4D3000C16 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Apacer Technology GD2.11173T.001 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Panram International Corporation L421008G4C1528K34O8A 8
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3333C16-16GTZ 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
SK Hynix HMT451U6BFR8A-PB 4GB
Smart Modular SF464128CK8I6GKSEG 4GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-3600C16-32GTZR 32GB
Kingston 99U5471-056.A00LF 8GB
Kingston 9905625-152.A00G 16GB
Samsung M393B1K70CH0-YH9 8GB
Samsung M392B1K70CM0-YH9 8GB
Report a bug
×
Bug description
Source link