RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3333C16-8GTZSK 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3333C16-8GTZSK 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3333C16-8GTZSK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3333C16-8GTZSK 8GB
Report a bug
Below the latency in the PassMark tests, ns
20
24
Around -20% lower latency
Faster reading speed, GB/s
20
16
Average value in the tests
Faster write speed, GB/s
17.1
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3333C16-8GTZSK 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
20
Read speed, GB/s
16.0
20.0
Write speed, GB/s
12.5
17.1
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3703
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3333C16-8GTZSK 8GB RAM comparisons
Kingston 9905403-444.A00LF 4GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3333C16-8GTZSK 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW64GX4M2E3200C16 32GB
Crucial Technology CT51264BD1339.M16F 4GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMD64GX4M8X3800C19 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4133C19-8GTZC 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Kingston XWM8G1-MIE 32GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR32D4U2S8ME-16 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Essencore Limited KD48GU880-36A180Z 8GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston KWTHG4-MIE 16GB
Kingston 9905403-090.A01LF 4GB
Corsair CMK256GX4M8A2400C16 32GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS8G4D240FSE.16FBD2 8GB
Report a bug
×
Bug description
Source link