RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C19-16GVRB 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3600C19-16GVRB 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3600C19-16GVRB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3600C19-16GVRB 16GB
Report a bug
Faster reading speed, GB/s
18.9
16
Average value in the tests
Faster write speed, GB/s
16.2
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C19-16GVRB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
18.9
Write speed, GB/s
12.5
16.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3835
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3600C19-16GVRB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK8GX4M1D2666C16 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston K1CXP8-MIE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C19-16GVRB 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
G Skill Intl F4-2666C18-32GRS 32GB
Samsung M393B5270CH0-CH9 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-8GTZKY 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3200C16-8GSXKB 8GB
A-DATA Technology DQVE1908 512MB
Corsair CMT64GX4M8X3000C15 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D240FSA.16FADG 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Kingston 99U5474-038.A00LF 4GB
Corsair CMU32GX4M2A2666C16 16GB
Kingston 9905403-447.A00LF 4GB
Mushkin 99[2/7/4]197F 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Report a bug
×
Bug description
Source link