RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C16-16GVK 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4000C16-16GVK 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-4000C16-16GVK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
26
Around 8% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-4000C16-16GVK 16GB
Report a bug
Faster reading speed, GB/s
20.5
16
Average value in the tests
Faster write speed, GB/s
17.1
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C16-16GVK 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
26
Read speed, GB/s
16.0
20.5
Write speed, GB/s
12.5
17.1
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3998
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-4000C16-16GVK 16GB RAM comparisons
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Kingston 9965669-018.A00G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C16-16GVK 16GB
Kingston 9905403-061.A00LF 2GB
Kingston 9965662-009.A00G 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C19-8GSXW 8GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M471A1G43DB0-0-B 8GB
Samsung M393B1K70CHD-CH9 8GB
Kingston CBD24D4S7D8MB-16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hewlett-Packard 7EH55AA# 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905624-004.A00G 4GB
Crucial Technology CT102464BF160B.C16 8GB
V-Color Technology Inc. TA48G30S815G 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M471A1G43DB0-CPB 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Apacer Technology 78.DAGP2.4030B 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston K6VDX7-MIE 8GB
Kingston 9905471-006.A00LF 4GB
Kingston 9905624-019.A00G 8GB
Kingston 9905458-017.A01LF 4GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Report a bug
×
Bug description
Source link