RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4133C19-8GTZA 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4133C19-8GTZA 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-4133C19-8GTZA 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Faster write speed, GB/s
12.5
12.2
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-4133C19-8GTZA 8GB
Report a bug
Faster reading speed, GB/s
17.3
16
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4133C19-8GTZA 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
17.3
Write speed, GB/s
12.5
12.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3209
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-4133C19-8GTZA 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology VDQVE1B16 2GB
AMD R748G2400U2S-UO 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9965596-031.B00G 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905744-023.A00G 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Kingston 9905403-011.A03LF 2GB
Corsair CMK16GX4M4B3733C17 4GB
Corsair VS2GB1333D4 2GB
SK Hynix HMA81GU6DJR8N-WM 8GB
Kingston 9965525-018.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston KY7N41-MID 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Essencore Limited IM48GU48N24-FFFHM 8GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology 16G4UD2400.C16BD1 16GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA82GU6DJR8N-WM 16GB
A-DATA Technology VDQVE1B16 2GB
Corsair CM4X8GE2666C16K4 8GB
Kingston KP4T2F-PSB 4GB
Kingston 9905744-077.A00G 16GB
Report a bug
×
Bug description
Source link