RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
29
Around 17% lower latency
Faster write speed, GB/s
12.5
10.8
Average value in the tests
Reasons to consider
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
Report a bug
Faster reading speed, GB/s
17.3
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
29
Read speed, GB/s
16.0
17.3
Write speed, GB/s
12.5
10.8
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2968
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK64GX4M4K3733C17 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Panram International Corporation W4U2133PS-8G 8GB
Kingston 9905403-156.A00LF 2GB
Kingston 9965596-036.B00G 8GB
Kingston KVR533D2N4 512MB
AMD R948G3206U2S 8GB
Kingston ACR256X64D3S1333C9 2GB
Mushkin 99[2/7/4]205F 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Samsung M378A1K43CB2-CTD 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9905668-002.A00G 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Corsair CML8GX3M2A1600C9 4GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
SK Hynix HMA81GU7CJR8N-VK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
PUSKILL DDR3 1600 8G 8GB
Kingston 9965589-007.D01G 8GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3000C16-8GRS 8GB
Report a bug
×
Bug description
Source link