RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Faster reading speed, GB/s
16
14.4
Average value in the tests
Faster write speed, GB/s
12.5
7.5
Average value in the tests
Reasons to consider
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
14.4
Write speed, GB/s
12.5
7.5
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2690
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KF552C40-16 16GB
G Skill Intl F4-3333C16-16GTZKW 16GB
AMD R5316G1609U2K 8GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C15-8GIS 8GB
Samsung M4 70T2953EZ3-CE6 1GB
A-DATA Technology DDR4 2400 2OZ 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9965600-033.A00G 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Kingston KHX1600C9D3/4G 4GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
Kingston 9965516-430.A00G 16GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
Kingston 99U5584-004.A00LF 4GB
Panram International Corporation D4N2400PS-8G 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Kingston 9905458-017.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Report a bug
×
Bug description
Source link