RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 16ATF2G64AZ-2G6B1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Reasons to consider
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
24
Around -9% lower latency
Faster reading speed, GB/s
18.2
16
Average value in the tests
Faster write speed, GB/s
13.5
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
22
Read speed, GB/s
16.0
18.2
Write speed, GB/s
12.5
13.5
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3201
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated PSD34G13332 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905471-006.A00LF 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
Kingston HX318C10FK/4 4GB
Corsair CM4X16GC3000C16K4D 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingston KHX2400C15/8G 8GB
Samsung M378B5673FH0-CH9 2GB
Heoriady HX2666DT8G-TD 8GB
Samsung M471B5173QH0-YK0 4GB
V-GEN D4H16GS24A8 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMW64GX4M8C3466C16 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston KHX3333C16D4/16GX 16GB
Kingston KHX318C10FR/8G 8GB
Kingston X0N6VG-HYD2 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Peak Electronics 256X64M-67E 2GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M391A2K43BB1-CRC 16GB
Apacer Technology 78.A1GC6.9H10C 2GB
SK Hynix HMA84GR7MFR4N-TF 32GB
Kingston 9965525-140.A00LF 8GB
Kingston HP26D4U9D8HC-16X 16GB
Report a bug
×
Bug description
Source link