RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 8ATF1G64AZ-2G6E1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
33
Around 27% lower latency
Reasons to consider
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Report a bug
Faster reading speed, GB/s
16.2
16
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
33
Read speed, GB/s
16.0
16.2
Write speed, GB/s
12.5
12.5
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2973
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF1G64AZ-2G6E1 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMU32GX4M4C3200C16 8GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Kingston 99U5584-018.A00LF 4GB
G Skill Intl F4-4600C18-8GTRS 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMD16GX4M2B2400C10 8GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CM4X4GF3000C15K4 4GB
Kingston KHX1600C9S3L/8G 8GB
Corsair CMD32GX4M4C3000C15 8GB
Kingston 9905403-090.A01LF 4GB
Samsung M378A1K43BB2-CRC 8GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Avant Technology F641GU67F9333G 8GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Report a bug
×
Bug description
Source link