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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology AFSD416ES1P 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology AFSD416ES1P 16GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score
star star star star star
Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    24 left arrow 25
    Around 4% lower latency
  • Faster reading speed, GB/s
    16 left arrow 14.5
    Average value in the tests
  • Faster write speed, GB/s
    12.5 left arrow 10.7
    Average value in the tests
Micron Technology AFSD416ES1P 16GB Reasons to consider
Micron Technology AFSD416ES1P 16GB
Report a bug

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology AFSD416ES1P 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    24 left arrow 25
  • Read speed, GB/s
    16.0 left arrow 14.5
  • Write speed, GB/s
    12.5 left arrow 10.7
  • Memory bandwidth, mbps
    19200 left arrow 19200
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2925 left arrow 2620

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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