RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
30
Around 20% lower latency
Reasons to consider
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Report a bug
Faster reading speed, GB/s
18.5
16
Average value in the tests
Faster write speed, GB/s
15.1
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
30
Read speed, GB/s
16.0
18.5
Write speed, GB/s
12.5
15.1
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3609
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB RAM comparisons
Hexon Technology Pte Ltd HEXON 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 18HTF12872AY-800F1 1GB
SK Hynix HMA81GR7MFR8N-UH 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M4C3400C16 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Kingston KP223C-ELD 2GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Kingston 9905471-002.A00LF 2GB
Kingston KHX4000C19D4/8GX 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Apacer Technology 78.B1GM3.AF00B 4GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
SK Hynix V-GeN D3H8GL1600RN 8GB
Kingston ACR26D4U9S1KA-4 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393A2K40CB2-CTD 16GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT16G4SFS832A.C8FE 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Team Group Inc. Team-Value-800 2GB
Kingston HP26D4U6S8ME-8X 8GB
Kingston 9905403-515.A00LF 8GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Report a bug
×
Bug description
Source link