RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Patriot Memory (PDP Systems) PSD416G320081 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Patriot Memory (PDP Systems) PSD416G320081 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
32
Around 25% lower latency
Reasons to consider
Patriot Memory (PDP Systems) PSD416G320081 16GB
Report a bug
Faster reading speed, GB/s
18.9
16
Average value in the tests
Faster write speed, GB/s
15.2
12.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
32
Read speed, GB/s
16.0
18.9
Write speed, GB/s
12.5
15.2
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
3621
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Patriot Memory (PDP Systems) PSD416G320081 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70QB0-CK0 8GB
Avant Technology J642GU42J9266NF 16GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMD16GX4M2K4133C19 8GB
Kingston KHX1600C9D3/8G 8GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Samsung M471B5673FH0-CF8 2GB
Corsair CM4B8G2J2400A14K 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Kingston 9905403-090.A01LF 4GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMW8GX4M1Z3600C18 8GB
Samsung M393B1G70BH0-YK0 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Corsair CMSO4GX3M1C1600C11 4GB
Avant Technology W6451U67J5213NB 4GB
Team Group Inc. Team-Elite-1333 4GB
Kingston 9905599-025.A00G 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK8GX4M1D2400C14 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMR16GX4M2C3200C16 8GB
Report a bug
×
Bug description
Source link