RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Ramaxel Technology RMSA3260MB78HAF2400 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
36
Around 33% lower latency
Faster reading speed, GB/s
16
13.6
Average value in the tests
Faster write speed, GB/s
12.5
9.9
Average value in the tests
Reasons to consider
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
36
Read speed, GB/s
16.0
13.6
Write speed, GB/s
12.5
9.9
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2360
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Transcend Information TS512MSH64V4H 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Samsung 1600 CL10 Series 8GB
Kingston ACR32D4U2S1ME-8 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3400C16-8GTZSW 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Kingston 9905599-025.A00G 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology BLS4G4D240FSE.8FAR 4GB
Corsair VS2GB1333D4 2GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Report a bug
×
Bug description
Source link