RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    19 left arrow 24
    Around -26% lower latency
  • Faster reading speed, GB/s
    19.5 left arrow 16
    Average value in the tests
  • Faster write speed, GB/s
    15.8 left arrow 12.5
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    24 left arrow 19
  • Read speed, GB/s
    16.0 left arrow 19.5
  • Write speed, GB/s
    12.5 left arrow 15.8
  • Memory bandwidth, mbps
    19200 left arrow 19200
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2925 left arrow 3435

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Memory RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3466C16-8GTZ 8GB
G Skill Intl F4-3466C16-8GTZ 8GB
Memory RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston K821PJ-MID 16GB
Kingston K821PJ-MID 16GB
Memory RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
Memory RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-2666C18-8GTZR 8GB
G Skill Intl F4-2666C18-8GTZR 8GB
Memory RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMD16GX4M4B3300C16 4GB
Corsair CMD16GX4M4B3300C16 4GB
Memory RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3600C16-8GTRGC 8GB
G Skill Intl F4-3600C16-8GTRGC 8GB
Memory RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Mushkin MR[A/B]280HHHH16G 16GB
Mushkin MR[A/B]280HHHH16G 16GB
Memory RAM
Micron Technology 16KTF1G64HZ-1G6E1 8GB
Micron Technology 16KTF1G64HZ-1G6E1 8GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Memory RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston K1CXP8-MIE 16GB
Kingston K1CXP8-MIE 16GB
Memory RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CM4X4GF2666C16K4 4GB
Corsair CM4X4GF2666C16K4 4GB
Memory RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston 9905700-025.A00G 8GB
Kingston 9905700-025.A00G 8GB
Memory RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
Memory RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Memory RAM