RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HMA81GU6DJR8N-XN 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs SK Hynix HMA81GU6DJR8N-XN 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
SK Hynix HMA81GU6DJR8N-XN 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
31
Around 23% lower latency
Reasons to consider
SK Hynix HMA81GU6DJR8N-XN 8GB
Report a bug
Faster reading speed, GB/s
17.2
16
Average value in the tests
Faster write speed, GB/s
12.9
12.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HMA81GU6DJR8N-XN 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
31
Read speed, GB/s
16.0
17.2
Write speed, GB/s
12.5
12.9
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
3100
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
SK Hynix HMA81GU6DJR8N-XN 8GB RAM comparisons
Kingston KF2933C17S4/16G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Hewlett-Packard 7EH74AA#ABC 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Samsung M378B5773DH0-CH9 2GB
Kingston MSI26D4S9S8ME-8 8GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3600C19-16GTRG 16GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston KHX3333C16D4/8GX 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Teclast TLD416G26A30 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CMK16GX4M2K4400C19 8GB
Samsung M393B5270CH0-CH9 4GB
SK Hynix HMA82GR7JJR8N-VK 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CM4X4GD3000C15K4 4GB
Kingston 99U5584-001.A00LF 4GB
Corsair CMK16GX4M2K4266C19 8GB
Corsair CMX4GX3M1A1333C9 4GB
Kingston 9905663-005.A00G 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
SK Hynix HYMP512U64CP8-Y5 1GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BL8G32C16U4RL.M8FE 8GB
Report a bug
×
Bug description
Source link