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Kingston 9965525-018.A00LF 4GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Kingston 9965525-018.A00LF 4GB vs Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Overall score
star star star star star
Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Overall score
star star star star star
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Differences Specifications Comments

Differences

Kingston 9965525-018.A00LF 4GB Reasons to consider
Kingston 9965525-018.A00LF 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 77
    Around 65% lower latency
  • Faster reading speed, GB/s
    13.2 left arrow 13.1
    Average value in the tests
  • Faster write speed, GB/s
    8.6 left arrow 5.5
    Average value in the tests
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB Reasons to consider
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Kingston 9965525-018.A00LF 4GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 77
  • Read speed, GB/s
    13.2 left arrow 13.1
  • Write speed, GB/s
    8.6 left arrow 5.5
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2196 left arrow 1440

Kingston 9965525-018.A00LF 4GB RAM comparisons

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Samsung M471B1G73EB0-YK0 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB RAM comparisons

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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