RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 99U5428-063.A00LF 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Compare
Kingston 99U5428-063.A00LF 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Overall score
Kingston 99U5428-063.A00LF 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston 99U5428-063.A00LF 8GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Report a bug
Below the latency in the PassMark tests, ns
31
42
Around -35% lower latency
Faster reading speed, GB/s
12.5
12.2
Average value in the tests
Faster write speed, GB/s
9.4
7.2
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Kingston 99U5428-063.A00LF 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
31
Read speed, GB/s
12.2
12.5
Write speed, GB/s
7.2
9.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2063
2361
Kingston 99U5428-063.A00LF 8GB RAM comparisons
Crucial Technology CT102464BF160B-16F 8GB
Kingston KHX426C13/8G 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70CH0-YH9 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
Kingston 9965525-155.A00LF 8GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3200C14-16GTZR 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Transcend Information TS512MLH64V1H 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-2400C17-8GIS 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Samsung M393A4K40CB2-CTD 32GB
Kingston 9965525-140.A00LF 8GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMU32GX4M2A2400C14 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DDR4 2666 2OZ 4GB
Report a bug
×
Bug description
Source link