RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston ACR256X64D3S1333C9 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Compare
Kingston ACR256X64D3S1333C9 2GB vs Chun Well Technology Holding Limited D4U0826190B 8GB
Overall score
Kingston ACR256X64D3S1333C9 2GB
Overall score
Chun Well Technology Holding Limited D4U0826190B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston ACR256X64D3S1333C9 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
29
Around 7% lower latency
Reasons to consider
Chun Well Technology Holding Limited D4U0826190B 8GB
Report a bug
Faster reading speed, GB/s
16.7
11.9
Average value in the tests
Faster write speed, GB/s
12.9
8.5
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Kingston ACR256X64D3S1333C9 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
29
Read speed, GB/s
11.9
16.7
Write speed, GB/s
8.5
12.9
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1620
3273
Kingston ACR256X64D3S1333C9 2GB RAM comparisons
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Chun Well Technology Holding Limited D4U0826190B 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-022.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMR16GX4M2F4000C19 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Swissbit SEU25664D6BC2EP-30 2GB
AMD AE34G2139U2 4GB
Corsair CMD32GX4M4C3200C14C 8GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMK16GX4M4A2666C15 4GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M471A2K43EB1-CWE 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3733C17-16GTZR 16GB
A-DATA Technology ADOVE1B163B2G 2GB
A-DATA Technology ADOVE1B163B2G 2GB
Samsung M471B5273CH0-CH9 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMW64GX4M4K3600C18 16GB
Samsung M393B5270CH0-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Report a bug
×
Bug description
Source link