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Kingston K1N7HK-ELC 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Kingston K1N7HK-ELC 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Overall score
star star star star star
Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Differences Specifications Comments

Differences

Kingston K1N7HK-ELC 2GB Reasons to consider
Kingston K1N7HK-ELC 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 31
    Around 16% lower latency
  • Faster reading speed, GB/s
    12.6 left arrow 12.5
    Average value in the tests
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Report a bug
  • Faster write speed, GB/s
    9.4 left arrow 7.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Kingston K1N7HK-ELC 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 31
  • Read speed, GB/s
    12.6 left arrow 12.5
  • Write speed, GB/s
    7.7 left arrow 9.4
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1820 left arrow 2361

Kingston K1N7HK-ELC 2GB RAM comparisons

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Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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