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Kingston K531R8-MIN 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Kingston K531R8-MIN 4GB vs Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Overall score
star star star star star
Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Overall score
star star star star star
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Differences Specifications Comments

Differences

Kingston K531R8-MIN 4GB Reasons to consider
Kingston K531R8-MIN 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 49
    Around 43% lower latency
  • Faster reading speed, GB/s
    13.4 left arrow 10.7
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 8.6
    Average value in the tests
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB Reasons to consider
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Kingston K531R8-MIN 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 49
  • Read speed, GB/s
    13.4 left arrow 10.7
  • Write speed, GB/s
    9.0 left arrow 8.6
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2445 left arrow 2504

Kingston K531R8-MIN 4GB RAM comparisons

Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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