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Micron Technology 16JTF25664AZ-1G4F1 2GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Compare
Micron Technology 16JTF25664AZ-1G4F1 2GB vs Samsung V-GeN D4S16GL26A8TL6 16GB
Overall score
Micron Technology 16JTF25664AZ-1G4F1 2GB
Overall score
Samsung V-GeN D4S16GL26A8TL6 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JTF25664AZ-1G4F1 2GB
Report a bug
Reasons to consider
Samsung V-GeN D4S16GL26A8TL6 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
40
Around -25% lower latency
Faster reading speed, GB/s
16
13.6
Average value in the tests
Faster write speed, GB/s
13.4
8.3
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JTF25664AZ-1G4F1 2GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
32
Read speed, GB/s
13.6
16.0
Write speed, GB/s
8.3
13.4
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2035
1897
Micron Technology 16JTF25664AZ-1G4F1 2GB RAM comparisons
Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
Samsung V-GeN D4S16GL26A8TL6 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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