RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Compare
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Overall score
Micron Technology 16JTF51264HZ-1G6M1 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around -17% lower latency
Faster reading speed, GB/s
16
12.9
Average value in the tests
Faster write speed, GB/s
10.8
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
24
Read speed, GB/s
12.9
16.0
Write speed, GB/s
9.0
10.8
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2112
2731
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM comparisons
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
AMD AE34G1601U1 4GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Samsung M378A1G43DB0-CPB 8GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Kingston 9965662-016.A00G 16GB
Corsair CMU32GX4M2C3200C16 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 9965640-008.A01G 32GB
Samsung M378A5244CB0-CTD 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston KH280C14D4/8X 8GB
Team Group Inc. Team-Elite-1333 4GB
Micron Technology 16GB 2133MHz DIMM 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMD32GX4M4A2800C16 8GB
Crucial Technology CT102464BF160B-16F 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
Wilk Elektronik S.A. GR2400S464L17/16G 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
Report a bug
×
Bug description
Source link