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Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M393A1K43BB1-CTD 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M393A1K43BB1-CTD 8GB

Overall score
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Overall score
star star star star star
Samsung M393A1K43BB1-CTD 8GB

Samsung M393A1K43BB1-CTD 8GB

Differences Specifications Comments

Differences

Micron Technology 16JTF51264HZ-1G6M1 4GB Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 61
    Around 54% lower latency
  • Faster reading speed, GB/s
    12.9 left arrow 8.2
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 6.4
    Average value in the tests
Samsung M393A1K43BB1-CTD 8GB Reasons to consider
Samsung M393A1K43BB1-CTD 8GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M393A1K43BB1-CTD 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 61
  • Read speed, GB/s
    12.9 left arrow 8.2
  • Write speed, GB/s
    9.0 left arrow 6.4
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2112 left arrow 1813

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM comparisons

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Samsung M393A1K43BB1-CTD 8GB RAM comparisons

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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