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Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M471A2K43EB1-CWE 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M471A2K43EB1-CWE 16GB

Overall score
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Overall score
star star star star star
Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Differences Specifications Comments

Differences

Micron Technology 16JTF51264HZ-1G6M1 4GB Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 55
    Around 49% lower latency
Samsung M471A2K43EB1-CWE 16GB Reasons to consider
Samsung M471A2K43EB1-CWE 16GB
Report a bug
  • Faster reading speed, GB/s
    15.8 left arrow 12.9
    Average value in the tests
  • Faster write speed, GB/s
    13.8 left arrow 9.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M471A2K43EB1-CWE 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 55
  • Read speed, GB/s
    12.9 left arrow 15.8
  • Write speed, GB/s
    9.0 left arrow 13.8
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2112 left arrow 2701

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM comparisons

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Samsung M471A2K43EB1-CWE 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
Memory RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Memory RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
SK Hynix HMA41GR7AFR4N-TF 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
Memory RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Shenzen Recadata Storage Technology 8GB
Shenzen Recadata Storage Technology 8GB
Memory RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology CB16GS2400.C16J 16GB
Crucial Technology CB16GS2400.C16J 16GB
Memory RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Apacer Technology 76.C102G.D170B 8GB
Apacer Technology 76.C102G.D170B 8GB
Memory RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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G Skill Intl F4-3000C15-4GRK 4GB
Memory RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
G Skill Intl F4-2400C15-8GNT 8GB
G Skill Intl F4-2400C15-8GNT 8GB
Memory RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
Memory RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
Memory RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Memory RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Kingston 9905678-102.A00G 8GB
Kingston 9905678-102.A00G 8GB
Memory RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMK16GX4M4B3200C15 4GB
Corsair CMK16GX4M4B3200C15 4GB
Memory RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston KHX2400C15S4/4G 4GB
Kingston KHX2400C15S4/4G 4GB
Memory RAM